Process for forming a low k carbon-doped silicon oxide dielectric material on an integrated circuit structure

A process for forming a low k carbon-doped silicon oxide dielectric material (lkc-dsodm) on an integrated circuit structure is characterized by improved planarity and good gap fill in high aspect ratio regions of the integrated circuit structure, as well as improved film strength and adherence, and...

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Bibliographische Detailangaben

Hauptverfasser:	ALLMAN DERRYL D. J, SAOPRASEUTH PONCE, BHATT HEMANSHU D
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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