Method of determining etch endpoint using principal components analysis of optical emission spectra

A method is provided for determining an etch endpoint. The method includes collecting intensity data representative of optical emission spectral wavelengths during a plasma etch process. The method further includes calculating Scores from at least a portion of the collected intensity data using at m...

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Bibliographische Detailangaben
Hauptverfasser:	YUE HONGYU, TOPRAC ANTHONY JOHN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMISTRY ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY HUMAN NECESSITIES HYGIENE INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING MEDICAL OR VETERINARY SCIENCE METALLURGY ORGANIC CHEMISTRY PEPTIDES PHYSICS PLASMA TECHNIQUE PREPARATIONS FOR MEDICAL, DENTAL, OR TOILET PURPOSES PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SEMICONDUCTOR DEVICES TESTING
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Beschreibung
Zusammenfassung:	A method is provided for determining an etch endpoint. The method includes collecting intensity data representative of optical emission spectral wavelengths during a plasma etch process. The method further includes calculating Scores from at least a portion of the collected intensity data using at most first, second, third and fourth Principal Components derived from a model. The method also includes determining the etch endpoint using Scores corresponding to at least one of the first, second, third and fourth Principal Components as an indicator for the etch endpoint.