Semiconductor device

Disclosed are a fast, highly-integrated and highly-reliable magnetoresistive random access memory (MRAM) and a semiconductor device which uses the MRAM. The semiconductor device performs the read-out operation of the MRAM using memory cells for storing information by using a change in magnetoresista...

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Hauptverfasser:	SAKATA TAKESHI, MATSUOKA HIDEYUKI, WATANABE KATSURO, ITO KENCHI, HANZAWA SATORU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS SEMICONDUCTOR DEVICES STATIC STORES
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creator	SAKATA TAKESHI MATSUOKA HIDEYUKI WATANABE KATSURO ITO KENCHI HANZAWA SATORU
description	Disclosed are a fast, highly-integrated and highly-reliable magnetoresistive random access memory (MRAM) and a semiconductor device which uses the MRAM. The semiconductor device performs the read-out operation of the MRAM using memory cells for storing information by using a change in magnetoresistance of a magnetic tunnel junction (MTJ) element with a high S/N ratio. Each memory cell includes an MTJ element and a bipolar transistor. The read-out operation is carried out by selecting a word line, amplifying a current flowing in the MTJ element of a target memory cell by the bipolar transistor and outputting the amplified current to an associated read data line.
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fullrecord	<record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US6573586B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US6573586B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US6573586B23</originalsourceid><addsrcrecordid>eNrjZBAJTs3NTM7PSylNLskvUkhJLctMTuVhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfGhwWam5samFmZORsZEKAEAJ0AgzA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Semiconductor device</title><source>esp@cenet</source><creator>SAKATA TAKESHI ; MATSUOKA HIDEYUKI ; WATANABE KATSURO ; ITO KENCHI ; HANZAWA SATORU</creator><creatorcontrib>SAKATA TAKESHI ; MATSUOKA HIDEYUKI ; WATANABE KATSURO ; ITO KENCHI ; HANZAWA SATORU</creatorcontrib><description>Disclosed are a fast, highly-integrated and highly-reliable magnetoresistive random access memory (MRAM) and a semiconductor device which uses the MRAM. The semiconductor device performs the read-out operation of the MRAM using memory cells for storing information by using a change in magnetoresistance of a magnetic tunnel junction (MTJ) element with a high S/N ratio. Each memory cell includes an MTJ element and a bipolar transistor. The read-out operation is carried out by selecting a word line, amplifying a current flowing in the MTJ element of a target memory cell by the bipolar transistor and outputting the amplified current to an associated read data line.</description><edition>7</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INFORMATION STORAGE ; PHYSICS ; SEMICONDUCTOR DEVICES ; STATIC STORES</subject><creationdate>2003</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20030603&DB=EPODOC&CC=US&NR=6573586B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20030603&DB=EPODOC&CC=US&NR=6573586B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SAKATA TAKESHI</creatorcontrib><creatorcontrib>MATSUOKA HIDEYUKI</creatorcontrib><creatorcontrib>WATANABE KATSURO</creatorcontrib><creatorcontrib>ITO KENCHI</creatorcontrib><creatorcontrib>HANZAWA SATORU</creatorcontrib><title>Semiconductor device</title><description>Disclosed are a fast, highly-integrated and highly-reliable magnetoresistive random access memory (MRAM) and a semiconductor device which uses the MRAM. The semiconductor device performs the read-out operation of the MRAM using memory cells for storing information by using a change in magnetoresistance of a magnetic tunnel junction (MTJ) element with a high S/N ratio. Each memory cell includes an MTJ element and a bipolar transistor. The read-out operation is carried out by selecting a word line, amplifying a current flowing in the MTJ element of a target memory cell by the bipolar transistor and outputting the amplified current to an associated read data line.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2003</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBAJTs3NTM7PSylNLskvUkhJLctMTuVhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfGhwWam5samFmZORsZEKAEAJ0AgzA</recordid><startdate>20030603</startdate><enddate>20030603</enddate><creator>SAKATA TAKESHI</creator><creator>MATSUOKA HIDEYUKI</creator><creator>WATANABE KATSURO</creator><creator>ITO KENCHI</creator><creator>HANZAWA SATORU</creator><scope>EVB</scope></search><sort><creationdate>20030603</creationdate><title>Semiconductor device</title><author>SAKATA TAKESHI ; MATSUOKA HIDEYUKI ; WATANABE KATSURO ; ITO KENCHI ; HANZAWA SATORU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US6573586B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2003</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>SAKATA TAKESHI</creatorcontrib><creatorcontrib>MATSUOKA HIDEYUKI</creatorcontrib><creatorcontrib>WATANABE KATSURO</creatorcontrib><creatorcontrib>ITO KENCHI</creatorcontrib><creatorcontrib>HANZAWA SATORU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SAKATA TAKESHI</au><au>MATSUOKA HIDEYUKI</au><au>WATANABE KATSURO</au><au>ITO KENCHI</au><au>HANZAWA SATORU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor device</title><date>2003-06-03</date><risdate>2003</risdate><abstract>Disclosed are a fast, highly-integrated and highly-reliable magnetoresistive random access memory (MRAM) and a semiconductor device which uses the MRAM. The semiconductor device performs the read-out operation of the MRAM using memory cells for storing information by using a change in magnetoresistance of a magnetic tunnel junction (MTJ) element with a high S/N ratio. Each memory cell includes an MTJ element and a bipolar transistor. The read-out operation is carried out by selecting a word line, amplifying a current flowing in the MTJ element of a target memory cell by the bipolar transistor and outputting the amplified current to an associated read data line.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record>
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subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS SEMICONDUCTOR DEVICES STATIC STORES
title	Semiconductor device
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