Nitrogen-rich barrier layer and structures formed
The present invention discloses a method for forming a layer of nitrogen and silicon containing material on a substrate by first providing a heated substrate and then flowing a gas which has silicon and nitrogen atoms but no carbon atoms in the same molecule over said heated substrate at a pressure...
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| creator | MCFEELY FENTON READ BUCHANAN DOUGLAS ANDREW COPEL MATTHEW WARREN HOLL MARK MONROE BANASZAK LITZ KYLE ERIK VAREKAMP PATRICK RONALD |
| description | The present invention discloses a method for forming a layer of nitrogen and silicon containing material on a substrate by first providing a heated substrate and then flowing a gas which has silicon and nitrogen atoms but no carbon atoms in the same molecule over said heated substrate at a pressure of not higher than 500 Torr, such that a layer of nitrogen and silicon containing material is formed on the surface. The present invention is further directed to a composite structure that includes a substrate and a layer of material containing nitrogen and silicon but not carbon overlying the substrate for stopping chemical species from reaching the substrate. The present invention is further directed to a structure that includes a semiconducting substrate, a gate insulator on the substrate, a nitrogen-rich layer on top of the gate insulator, and a gate electrode on the nitrogen-rich layer, wherein the nitrogen-rich layer blocks diffusion of contaminating species from the gate electrode to the gate insulator. |
| format | Patent |
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The present invention is further directed to a composite structure that includes a substrate and a layer of material containing nitrogen and silicon but not carbon overlying the substrate for stopping chemical species from reaching the substrate. The present invention is further directed to a structure that includes a semiconducting substrate, a gate insulator on the substrate, a nitrogen-rich layer on top of the gate insulator, and a gate electrode on the nitrogen-rich layer, wherein the nitrogen-rich layer blocks diffusion of contaminating species from the gate electrode to the gate insulator.</description><edition>7</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2003</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20030520&DB=EPODOC&CC=US&NR=6566281B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20030520&DB=EPODOC&CC=US&NR=6566281B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MCFEELY FENTON READ</creatorcontrib><creatorcontrib>BUCHANAN DOUGLAS ANDREW</creatorcontrib><creatorcontrib>COPEL MATTHEW WARREN</creatorcontrib><creatorcontrib>HOLL MARK MONROE BANASZAK</creatorcontrib><creatorcontrib>LITZ KYLE ERIK</creatorcontrib><creatorcontrib>VAREKAMP PATRICK RONALD</creatorcontrib><title>Nitrogen-rich barrier layer and structures formed</title><description>The present invention discloses a method for forming a layer of nitrogen and silicon containing material on a substrate by first providing a heated substrate and then flowing a gas which has silicon and nitrogen atoms but no carbon atoms in the same molecule over said heated substrate at a pressure of not higher than 500 Torr, such that a layer of nitrogen and silicon containing material is formed on the surface. The present invention is further directed to a composite structure that includes a substrate and a layer of material containing nitrogen and silicon but not carbon overlying the substrate for stopping chemical species from reaching the substrate. The present invention is further directed to a structure that includes a semiconducting substrate, a gate insulator on the substrate, a nitrogen-rich layer on top of the gate insulator, and a gate electrode on the nitrogen-rich layer, wherein the nitrogen-rich layer blocks diffusion of contaminating species from the gate electrode to the gate insulator.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2003</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDD0yywpyk9PzdMtykzOUEhKLCrKTC1SyEmsBJKJeSkKxSVFpcklpUWpxQpp-UW5qSk8DKxpiTnFqbxQmptBwc01xNlDN7UgPz61uCAxOTUvtSQ-NNjM1MzMyMLQydCYCCUAYA8rvQ</recordid><startdate>20030520</startdate><enddate>20030520</enddate><creator>MCFEELY FENTON READ</creator><creator>BUCHANAN DOUGLAS ANDREW</creator><creator>COPEL MATTHEW WARREN</creator><creator>HOLL MARK MONROE BANASZAK</creator><creator>LITZ KYLE ERIK</creator><creator>VAREKAMP PATRICK RONALD</creator><scope>EVB</scope></search><sort><creationdate>20030520</creationdate><title>Nitrogen-rich barrier layer and structures formed</title><author>MCFEELY FENTON READ ; BUCHANAN DOUGLAS ANDREW ; COPEL MATTHEW WARREN ; HOLL MARK MONROE BANASZAK ; LITZ KYLE ERIK ; VAREKAMP PATRICK RONALD</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US6566281B13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2003</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>MCFEELY FENTON READ</creatorcontrib><creatorcontrib>BUCHANAN DOUGLAS ANDREW</creatorcontrib><creatorcontrib>COPEL MATTHEW WARREN</creatorcontrib><creatorcontrib>HOLL MARK MONROE BANASZAK</creatorcontrib><creatorcontrib>LITZ KYLE ERIK</creatorcontrib><creatorcontrib>VAREKAMP PATRICK RONALD</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MCFEELY FENTON READ</au><au>BUCHANAN DOUGLAS ANDREW</au><au>COPEL MATTHEW WARREN</au><au>HOLL MARK MONROE BANASZAK</au><au>LITZ KYLE ERIK</au><au>VAREKAMP PATRICK RONALD</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Nitrogen-rich barrier layer and structures formed</title><date>2003-05-20</date><risdate>2003</risdate><abstract>The present invention discloses a method for forming a layer of nitrogen and silicon containing material on a substrate by first providing a heated substrate and then flowing a gas which has silicon and nitrogen atoms but no carbon atoms in the same molecule over said heated substrate at a pressure of not higher than 500 Torr, such that a layer of nitrogen and silicon containing material is formed on the surface. The present invention is further directed to a composite structure that includes a substrate and a layer of material containing nitrogen and silicon but not carbon overlying the substrate for stopping chemical species from reaching the substrate. The present invention is further directed to a structure that includes a semiconducting substrate, a gate insulator on the substrate, a nitrogen-rich layer on top of the gate insulator, and a gate electrode on the nitrogen-rich layer, wherein the nitrogen-rich layer blocks diffusion of contaminating species from the gate electrode to the gate insulator.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Nitrogen-rich barrier layer and structures formed |
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