Methods for etching tungsten stack structures

The invention encompasses methods for etching and/or over-etching tungsten stack structures, especially tungsten-polysilicon stack structures. The etching methods of the invention preferably employ a Cl2/NF3 etchant, optionally including O2 and/or helium. The over-etching methods of the invention pr...

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1. Verfasser:	NAEEM MUNIR D
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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