Method and apparatus for detecting ion implant induced defects

Method and apparatus for detecting ion implant induced defects

Various methods and apparatus are provided for testing an ion implantation tool. In one aspect, a method of testing an ion implanter is provided that includes forming a mask with a preselected pattern on a substrate. An ion implant is performed on the mask with the ion implanter. Following the ion i...

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Hauptverfasser: COUTEAU TERRI A, SUTTON DANIEL E, HENDRIX DAVID, SATTERFIELD MICHAEL J, PRESSLEY LAURA A, HANCE BRYON K
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator COUTEAU TERRI A
SUTTON DANIEL E
HENDRIX DAVID
SATTERFIELD MICHAEL J
PRESSLEY LAURA A
HANCE BRYON K
description Various methods and apparatus are provided for testing an ion implantation tool. In one aspect, a method of testing an ion implanter is provided that includes forming a mask with a preselected pattern on a substrate. An ion implant is performed on the mask with the ion implanter. Following the ion implant, a scan of the mask is performed to identify any defects thereon. Defects appearing on the mask following the implant are indicative of latent mechanisms at work within the implanter. Ion implanter induced defects may be economically analyzed.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Method and apparatus for detecting ion implant induced defects
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