Method to prevent charging effects in electrostatic devices
The present invention significantly reduces charging effects in electrostatic devices due to charge accumulation in or on the insulating materials on the active surfaces of the devices. This has been achieved by replacing the dielectric material that is normally present between the force generating...
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creator | CHEONG HUI WING SAMPER VICTOR DONALD HUA FENG HAN KNUEPPEL OLAF SRIDHAR UPPILI |
description | The present invention significantly reduces charging effects in electrostatic devices due to charge accumulation in or on the insulating materials on the active surfaces of the devices. This has been achieved by replacing the dielectric material that is normally present between the force generating conductor surfaces with a semi-insulating material. This semi-insulating film overcomes the effects of charging, while avoiding short-circuits when the surfaces are pulled into contact. It is not subject to insulation breakdown within the range of voltages used to operate the device. Examples of semi-insulating materials that may be used are semi-insulating polysilicon (SIPOS) and silicon rich silicon nitride. |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US6483223B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US6483223B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US6483223B23</originalsourceid><addsrcrecordid>eNrjZLD2TS3JyE9RKMlXKChKLUvNK1FIzkgsSs_MS1dITUtLTS4pVsjMU0jNAbKK8otLEksykxVSUssyk1OLeRhY0xJzilN5oTQ3g4Kba4izh25qQX58anFBYnJqXmpJfGiwmYmFsZGRsZORMRFKAGm8L2c</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Method to prevent charging effects in electrostatic devices</title><source>esp@cenet</source><creator>CHEONG HUI WING ; SAMPER VICTOR DONALD ; HUA FENG HAN ; KNUEPPEL OLAF ; SRIDHAR UPPILI</creator><creatorcontrib>CHEONG HUI WING ; SAMPER VICTOR DONALD ; HUA FENG HAN ; KNUEPPEL OLAF ; SRIDHAR UPPILI</creatorcontrib><description>The present invention significantly reduces charging effects in electrostatic devices due to charge accumulation in or on the insulating materials on the active surfaces of the devices. This has been achieved by replacing the dielectric material that is normally present between the force generating conductor surfaces with a semi-insulating material. This semi-insulating film overcomes the effects of charging, while avoiding short-circuits when the surfaces are pulled into contact. It is not subject to insulation breakdown within the range of voltages used to operate the device. Examples of semi-insulating materials that may be used are semi-insulating polysilicon (SIPOS) and silicon rich silicon nitride.</description><edition>7</edition><language>eng</language><subject>CONVERSION OR DISTRIBUTION OF ELECTRIC POWER ; ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; GENERATION</subject><creationdate>2002</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20021119&DB=EPODOC&CC=US&NR=6483223B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76419</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20021119&DB=EPODOC&CC=US&NR=6483223B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>CHEONG HUI WING</creatorcontrib><creatorcontrib>SAMPER VICTOR DONALD</creatorcontrib><creatorcontrib>HUA FENG HAN</creatorcontrib><creatorcontrib>KNUEPPEL OLAF</creatorcontrib><creatorcontrib>SRIDHAR UPPILI</creatorcontrib><title>Method to prevent charging effects in electrostatic devices</title><description>The present invention significantly reduces charging effects in electrostatic devices due to charge accumulation in or on the insulating materials on the active surfaces of the devices. This has been achieved by replacing the dielectric material that is normally present between the force generating conductor surfaces with a semi-insulating material. This semi-insulating film overcomes the effects of charging, while avoiding short-circuits when the surfaces are pulled into contact. It is not subject to insulation breakdown within the range of voltages used to operate the device. Examples of semi-insulating materials that may be used are semi-insulating polysilicon (SIPOS) and silicon rich silicon nitride.</description><subject>CONVERSION OR DISTRIBUTION OF ELECTRIC POWER</subject><subject>ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>GENERATION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2002</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLD2TS3JyE9RKMlXKChKLUvNK1FIzkgsSs_MS1dITUtLTS4pVsjMU0jNAbKK8otLEksykxVSUssyk1OLeRhY0xJzilN5oTQ3g4Kba4izh25qQX58anFBYnJqXmpJfGiwmYmFsZGRsZORMRFKAGm8L2c</recordid><startdate>20021119</startdate><enddate>20021119</enddate><creator>CHEONG HUI WING</creator><creator>SAMPER VICTOR DONALD</creator><creator>HUA FENG HAN</creator><creator>KNUEPPEL OLAF</creator><creator>SRIDHAR UPPILI</creator><scope>EVB</scope></search><sort><creationdate>20021119</creationdate><title>Method to prevent charging effects in electrostatic devices</title><author>CHEONG HUI WING ; SAMPER VICTOR DONALD ; HUA FENG HAN ; KNUEPPEL OLAF ; SRIDHAR UPPILI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US6483223B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2002</creationdate><topic>CONVERSION OR DISTRIBUTION OF ELECTRIC POWER</topic><topic>ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>GENERATION</topic><toplevel>online_resources</toplevel><creatorcontrib>CHEONG HUI WING</creatorcontrib><creatorcontrib>SAMPER VICTOR DONALD</creatorcontrib><creatorcontrib>HUA FENG HAN</creatorcontrib><creatorcontrib>KNUEPPEL OLAF</creatorcontrib><creatorcontrib>SRIDHAR UPPILI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>CHEONG HUI WING</au><au>SAMPER VICTOR DONALD</au><au>HUA FENG HAN</au><au>KNUEPPEL OLAF</au><au>SRIDHAR UPPILI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method to prevent charging effects in electrostatic devices</title><date>2002-11-19</date><risdate>2002</risdate><abstract>The present invention significantly reduces charging effects in electrostatic devices due to charge accumulation in or on the insulating materials on the active surfaces of the devices. This has been achieved by replacing the dielectric material that is normally present between the force generating conductor surfaces with a semi-insulating material. This semi-insulating film overcomes the effects of charging, while avoiding short-circuits when the surfaces are pulled into contact. It is not subject to insulation breakdown within the range of voltages used to operate the device. Examples of semi-insulating materials that may be used are semi-insulating polysilicon (SIPOS) and silicon rich silicon nitride.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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subjects | CONVERSION OR DISTRIBUTION OF ELECTRIC POWER ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERATION |
title | Method to prevent charging effects in electrostatic devices |
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