Substrate for high frequency integrated circuits

A silicon substrate material based on silicon has a semi-insulating interior layer isolating the bulk of the substrate material from the top layers, where integrated circuits are to be built. The semi-insulating layer is created by producing submicron particles having Schotty barriers or pn-hereto-b...

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Bibliographische Detailangaben

Hauptverfasser:	LITWIN ANDREJ, SOEDERBAERG ANDERS
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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