Decoupling capacitor method and structure using metal based carrier
A process for fabricating a structure using a metal carrier and forming a double capacitor structure. The process comprises forming a first via hole through the metal carrier, forming a dielectric layer around the metal carrier and inside the first via hole, forming a second via hole through the die...
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| creator | FAROOQ MUKTA S KNICKERBOCKER JOHN U REDDY SRINIVASA N FAROOQ SHAJI RITA ROBERT A |
| description | A process for fabricating a structure using a metal carrier and forming a double capacitor structure. The process comprises forming a first via hole through the metal carrier, forming a dielectric layer around the metal carrier and inside the first via hole, forming a second via hole through the dielectric layer and the metal carrier, and filling at least one of the via holes with conductive material. In one preferred embodiment, the process further comprises forming a third via hole through the metal carrier before the forming of a dielectric layer, wherein the dielectric layer is formed around the metal carrier, inside the first via hole, and inside the third via hole. The first via hole, the second via hole, and the third via hole are all filled with a conductive material. In one preferred embodiment, the dielectric layer comprises a top surface opposed to a bottom surface, and electrodes are formed on at least one of the top surface and the bottom surface of the dielectric layer. |
| format | Patent |
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The process comprises forming a first via hole through the metal carrier, forming a dielectric layer around the metal carrier and inside the first via hole, forming a second via hole through the dielectric layer and the metal carrier, and filling at least one of the via holes with conductive material. In one preferred embodiment, the process further comprises forming a third via hole through the metal carrier before the forming of a dielectric layer, wherein the dielectric layer is formed around the metal carrier, inside the first via hole, and inside the third via hole. The first via hole, the second via hole, and the third via hole are all filled with a conductive material. In one preferred embodiment, the dielectric layer comprises a top surface opposed to a bottom surface, and electrodes are formed on at least one of the top surface and the bottom surface of the dielectric layer.</description><edition>7</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CAPACITORS ; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE ; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS ; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS ; PRINTED CIRCUITS</subject><creationdate>2002</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20021008&DB=EPODOC&CC=US&NR=6461493B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20021008&DB=EPODOC&CC=US&NR=6461493B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>FAROOQ MUKTA S</creatorcontrib><creatorcontrib>KNICKERBOCKER JOHN U</creatorcontrib><creatorcontrib>REDDY SRINIVASA N</creatorcontrib><creatorcontrib>FAROOQ SHAJI</creatorcontrib><creatorcontrib>RITA ROBERT A</creatorcontrib><title>Decoupling capacitor method and structure using metal based carrier</title><description>A process for fabricating a structure using a metal carrier and forming a double capacitor structure. The process comprises forming a first via hole through the metal carrier, forming a dielectric layer around the metal carrier and inside the first via hole, forming a second via hole through the dielectric layer and the metal carrier, and filling at least one of the via holes with conductive material. In one preferred embodiment, the process further comprises forming a third via hole through the metal carrier before the forming of a dielectric layer, wherein the dielectric layer is formed around the metal carrier, inside the first via hole, and inside the third via hole. The first via hole, the second via hole, and the third via hole are all filled with a conductive material. In one preferred embodiment, the dielectric layer comprises a top surface opposed to a bottom surface, and electrodes are formed on at least one of the top surface and the bottom surface of the dielectric layer.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CAPACITORS</subject><subject>CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE</subject><subject>CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS</subject><subject>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS</subject><subject>PRINTED CIRCUITS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2002</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHB2SU3OLy3IycxLV0hOLEhMzizJL1LITS3JyE9RSMxLUSguKSpNLiktSlUoLQYpAkol5igkJRanpgA1FBVlphbxMLCmJeYUp_JCaW4GBTfXEGcP3dSC_PjUYqChqXmpJfGhwWYmZoYmlsZOhsZEKAEAQ0AygQ</recordid><startdate>20021008</startdate><enddate>20021008</enddate><creator>FAROOQ MUKTA S</creator><creator>KNICKERBOCKER JOHN U</creator><creator>REDDY SRINIVASA N</creator><creator>FAROOQ SHAJI</creator><creator>RITA ROBERT A</creator><scope>EVB</scope></search><sort><creationdate>20021008</creationdate><title>Decoupling capacitor method and structure using metal based carrier</title><author>FAROOQ MUKTA S ; KNICKERBOCKER JOHN U ; REDDY SRINIVASA N ; FAROOQ SHAJI ; RITA ROBERT A</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US6461493B13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2002</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CAPACITORS</topic><topic>CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE</topic><topic>CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS</topic><topic>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS</topic><topic>PRINTED CIRCUITS</topic><toplevel>online_resources</toplevel><creatorcontrib>FAROOQ MUKTA S</creatorcontrib><creatorcontrib>KNICKERBOCKER JOHN U</creatorcontrib><creatorcontrib>REDDY SRINIVASA N</creatorcontrib><creatorcontrib>FAROOQ SHAJI</creatorcontrib><creatorcontrib>RITA ROBERT A</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>FAROOQ MUKTA S</au><au>KNICKERBOCKER JOHN U</au><au>REDDY SRINIVASA N</au><au>FAROOQ SHAJI</au><au>RITA ROBERT A</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Decoupling capacitor method and structure using metal based carrier</title><date>2002-10-08</date><risdate>2002</risdate><abstract>A process for fabricating a structure using a metal carrier and forming a double capacitor structure. The process comprises forming a first via hole through the metal carrier, forming a dielectric layer around the metal carrier and inside the first via hole, forming a second via hole through the dielectric layer and the metal carrier, and filling at least one of the via holes with conductive material. In one preferred embodiment, the process further comprises forming a third via hole through the metal carrier before the forming of a dielectric layer, wherein the dielectric layer is formed around the metal carrier, inside the first via hole, and inside the third via hole. The first via hole, the second via hole, and the third via hole are all filled with a conductive material. In one preferred embodiment, the dielectric layer comprises a top surface opposed to a bottom surface, and electrodes are formed on at least one of the top surface and the bottom surface of the dielectric layer.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CAPACITORS CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS PRINTED CIRCUITS |
| title | Decoupling capacitor method and structure using metal based carrier |
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