Method and apparatus for monitoring the process state of a semiconductor device fabrication process
A method and apparatus for monitoring process state using plasma attributes are provided. Electromagnetic emissions generated by a plasma are collected, and a detection signal having at least one frequency component is generated based on the intensity of the collected electromagnetic emissions; or,...
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| creator | DAVIDOW JED SARFATY MOSHE LYMBEROPOULOS DIMITRIS |
| description | A method and apparatus for monitoring process state using plasma attributes are provided. Electromagnetic emissions generated by a plasma are collected, and a detection signal having at least one frequency component is generated based on the intensity of the collected electromagnetic emissions; or, the RF power delivered to a wafer pedestal is monitored and serves as the detection signal. The magnitude of at least one frequency component of the detection signal then is monitored over time. By monitoring the magnitude of at least one frequency component of the detection signal over time, a characteristic fingerprint of the plasma process is obtained. Features within the characteristic fingerprint provide process state information, process event information and process chamber information. In general, any chemical reaction having an attribute that varies with reaction rate may be similarly monitored. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US6455437B1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US6455437B1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US6455437B13</originalsourceid><addsrcrecordid>eNqNizEOwjAMALswIOAP_gADags7CMTCBMyVcRxqicZR7PJ-OsDOcLrlbl7Rhb3XAJgmcsaCPhpELTBoEtci6QneM-SixGZgjs6gERCMByFNYaSpg8BvIYaIjyKELpp-z7KaRXwZr75eVHA63g7nNWft2DISJ_buft02bdvUu_2m_iP5AFPXPrc</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Method and apparatus for monitoring the process state of a semiconductor device fabrication process</title><source>esp@cenet</source><creator>DAVIDOW JED ; SARFATY MOSHE ; LYMBEROPOULOS DIMITRIS</creator><creatorcontrib>DAVIDOW JED ; SARFATY MOSHE ; LYMBEROPOULOS DIMITRIS</creatorcontrib><description>A method and apparatus for monitoring process state using plasma attributes are provided. Electromagnetic emissions generated by a plasma are collected, and a detection signal having at least one frequency component is generated based on the intensity of the collected electromagnetic emissions; or, the RF power delivered to a wafer pedestal is monitored and serves as the detection signal. The magnitude of at least one frequency component of the detection signal then is monitored over time. By monitoring the magnitude of at least one frequency component of the detection signal over time, a characteristic fingerprint of the plasma process is obtained. Features within the characteristic fingerprint provide process state information, process event information and process chamber information. In general, any chemical reaction having an attribute that varies with reaction rate may be similarly monitored.</description><edition>7</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; PLASMA TECHNIQUE ; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS ; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2002</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20020924&DB=EPODOC&CC=US&NR=6455437B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20020924&DB=EPODOC&CC=US&NR=6455437B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>DAVIDOW JED</creatorcontrib><creatorcontrib>SARFATY MOSHE</creatorcontrib><creatorcontrib>LYMBEROPOULOS DIMITRIS</creatorcontrib><title>Method and apparatus for monitoring the process state of a semiconductor device fabrication process</title><description>A method and apparatus for monitoring process state using plasma attributes are provided. Electromagnetic emissions generated by a plasma are collected, and a detection signal having at least one frequency component is generated based on the intensity of the collected electromagnetic emissions; or, the RF power delivered to a wafer pedestal is monitored and serves as the detection signal. The magnitude of at least one frequency component of the detection signal then is monitored over time. By monitoring the magnitude of at least one frequency component of the detection signal over time, a characteristic fingerprint of the plasma process is obtained. Features within the characteristic fingerprint provide process state information, process event information and process chamber information. In general, any chemical reaction having an attribute that varies with reaction rate may be similarly monitored.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>PLASMA TECHNIQUE</subject><subject>PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS</subject><subject>PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2002</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNizEOwjAMALswIOAP_gADags7CMTCBMyVcRxqicZR7PJ-OsDOcLrlbl7Rhb3XAJgmcsaCPhpELTBoEtci6QneM-SixGZgjs6gERCMByFNYaSpg8BvIYaIjyKELpp-z7KaRXwZr75eVHA63g7nNWft2DISJ_buft02bdvUu_2m_iP5AFPXPrc</recordid><startdate>20020924</startdate><enddate>20020924</enddate><creator>DAVIDOW JED</creator><creator>SARFATY MOSHE</creator><creator>LYMBEROPOULOS DIMITRIS</creator><scope>EVB</scope></search><sort><creationdate>20020924</creationdate><title>Method and apparatus for monitoring the process state of a semiconductor device fabrication process</title><author>DAVIDOW JED ; SARFATY MOSHE ; LYMBEROPOULOS DIMITRIS</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US6455437B13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2002</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>PLASMA TECHNIQUE</topic><topic>PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS</topic><topic>PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>DAVIDOW JED</creatorcontrib><creatorcontrib>SARFATY MOSHE</creatorcontrib><creatorcontrib>LYMBEROPOULOS DIMITRIS</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>DAVIDOW JED</au><au>SARFATY MOSHE</au><au>LYMBEROPOULOS DIMITRIS</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method and apparatus for monitoring the process state of a semiconductor device fabrication process</title><date>2002-09-24</date><risdate>2002</risdate><abstract>A method and apparatus for monitoring process state using plasma attributes are provided. Electromagnetic emissions generated by a plasma are collected, and a detection signal having at least one frequency component is generated based on the intensity of the collected electromagnetic emissions; or, the RF power delivered to a wafer pedestal is monitored and serves as the detection signal. The magnitude of at least one frequency component of the detection signal then is monitored over time. By monitoring the magnitude of at least one frequency component of the detection signal over time, a characteristic fingerprint of the plasma process is obtained. Features within the characteristic fingerprint provide process state information, process event information and process chamber information. In general, any chemical reaction having an attribute that varies with reaction rate may be similarly monitored.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | Method and apparatus for monitoring the process state of a semiconductor device fabrication process |
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