Method of encapsulated copper (Cu) interconnect formation

A method of forming a semiconductor device having selectively fabricated copper interconnect structure that is encapsulated within selectively formed metallic barriers. An exemplary encapsulated copper interconnect structure includes a first low dielectric constant layer (low K1) formed over a subst...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: LOPATIN SERGEY D, CHEUNG ROBIN W
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!