Atomic force microscopy and signal acquisition via buried insulator

Analysis of a semiconductor die having silicon-on-insulator (SOI) structure is enhanced by accessing the circuitry within the die from the back side without necessarily breaching the insulator layer of the SOI structure. According to an example embodiment of the present invention, a semiconductor di...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	BRUCE MICHAEL R, RING ROSALINDA M, BIRDSLEY JEFFREY D, DAVIS BRENNAN V, STONE DANIEL L
Format:	Patent
Sprache:	eng
Schlagworte:	APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBEMICROSCOPY [SPM] MEASURING PHYSICS SCANNING-PROBE TECHNIQUES OR APPARATUS TESTING
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