Method for forming a TiN layer on top of a metal silicide layer in a semiconductor structure and structure formed

A method for forming a TiN layer on top of a metal silicide layer in a semiconductor structure without the formation of a thick amorphous layer containing Ti, Co and Si and the structure formed are provided. In the method, after a Ti layer is deposited on top of a metal silidide layer, a dual-step a...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	GIGNAC LYNNE MARIE, WAGNER TINA, ENG CHUNG-PING, LAVOIE CHRISTIAN, PETERSON KIRK DAVID, O'NEIL PATRICIA, WANG YUN-YU, CABRAL, JR. CYRIL, WONG KEITH
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!