Dual layer etch stop barrier
A method for reactive ion etching of SiO2 and an etch stop barrier for use in such an etching is provided. A silicon nitride (SixNy) barrier having a Six to Ny ratio (x:y) of less than about 0.8 and preferably the stoichiometric amount of 0.75 provides excellent resilience to positive mobile ion con...
Gespeichert in:
| Hauptverfasser: | , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | WHITE FRANCIS ROGER LAM CHUNG HON LEE ERIC SEUNG |
| description | A method for reactive ion etching of SiO2 and an etch stop barrier for use in such an etching is provided. A silicon nitride (SixNy) barrier having a Six to Ny ratio (x:y) of less than about 0.8 and preferably the stoichiometric amount of 0.75 provides excellent resilience to positive mobile ion contamination, but poor etch selectivity. However, a silicon nitride barrier having a ratio of Six to Nx (x:y) of 1.0 or greater has excellent etch selectivity with respect to SiO2 but a poor barrier to positive mobile ion contamination. A barrier of silicon nitride is formed on a doped silicon substrate which barrier has two sections. One section has a greater etch selectivity with respect to silicon dioxide than the second section and the second section has a greater resistance to transmission of positive mobile ions than the first section. One section adjacent the silicon substrate has a silicon to nitrogen ratio of less than about 0.8. The second section, formed on top of the first section is formed with the ratio of the silicon to nitrogen of greater than about 0.8. Preferably the two sections together are from about 50 to about 100 nanometers thick. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US6420777B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US6420777B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US6420777B23</originalsourceid><addsrcrecordid>eNrjZJBxKU3MUchJrEwtUkgtSc5QKC7JL1BISiwqykwt4mFgTUvMKU7lhdLcDApuriHOHrqpBfnxqcUFicmpeakl8aHBZiZGBubm5k5GxkQoAQBDayNL</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Dual layer etch stop barrier</title><source>esp@cenet</source><creator>WHITE FRANCIS ROGER ; LAM CHUNG HON ; LEE ERIC SEUNG</creator><creatorcontrib>WHITE FRANCIS ROGER ; LAM CHUNG HON ; LEE ERIC SEUNG</creatorcontrib><description>A method for reactive ion etching of SiO2 and an etch stop barrier for use in such an etching is provided. A silicon nitride (SixNy) barrier having a Six to Ny ratio (x:y) of less than about 0.8 and preferably the stoichiometric amount of 0.75 provides excellent resilience to positive mobile ion contamination, but poor etch selectivity. However, a silicon nitride barrier having a ratio of Six to Nx (x:y) of 1.0 or greater has excellent etch selectivity with respect to SiO2 but a poor barrier to positive mobile ion contamination. A barrier of silicon nitride is formed on a doped silicon substrate which barrier has two sections. One section has a greater etch selectivity with respect to silicon dioxide than the second section and the second section has a greater resistance to transmission of positive mobile ions than the first section. One section adjacent the silicon substrate has a silicon to nitrogen ratio of less than about 0.8. The second section, formed on top of the first section is formed with the ratio of the silicon to nitrogen of greater than about 0.8. Preferably the two sections together are from about 50 to about 100 nanometers thick.</description><edition>7</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2002</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20020716&DB=EPODOC&CC=US&NR=6420777B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76516</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20020716&DB=EPODOC&CC=US&NR=6420777B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>WHITE FRANCIS ROGER</creatorcontrib><creatorcontrib>LAM CHUNG HON</creatorcontrib><creatorcontrib>LEE ERIC SEUNG</creatorcontrib><title>Dual layer etch stop barrier</title><description>A method for reactive ion etching of SiO2 and an etch stop barrier for use in such an etching is provided. A silicon nitride (SixNy) barrier having a Six to Ny ratio (x:y) of less than about 0.8 and preferably the stoichiometric amount of 0.75 provides excellent resilience to positive mobile ion contamination, but poor etch selectivity. However, a silicon nitride barrier having a ratio of Six to Nx (x:y) of 1.0 or greater has excellent etch selectivity with respect to SiO2 but a poor barrier to positive mobile ion contamination. A barrier of silicon nitride is formed on a doped silicon substrate which barrier has two sections. One section has a greater etch selectivity with respect to silicon dioxide than the second section and the second section has a greater resistance to transmission of positive mobile ions than the first section. One section adjacent the silicon substrate has a silicon to nitrogen ratio of less than about 0.8. The second section, formed on top of the first section is formed with the ratio of the silicon to nitrogen of greater than about 0.8. Preferably the two sections together are from about 50 to about 100 nanometers thick.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2002</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJBxKU3MUchJrEwtUkgtSc5QKC7JL1BISiwqykwt4mFgTUvMKU7lhdLcDApuriHOHrqpBfnxqcUFicmpeakl8aHBZiZGBubm5k5GxkQoAQBDayNL</recordid><startdate>20020716</startdate><enddate>20020716</enddate><creator>WHITE FRANCIS ROGER</creator><creator>LAM CHUNG HON</creator><creator>LEE ERIC SEUNG</creator><scope>EVB</scope></search><sort><creationdate>20020716</creationdate><title>Dual layer etch stop barrier</title><author>WHITE FRANCIS ROGER ; LAM CHUNG HON ; LEE ERIC SEUNG</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US6420777B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2002</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>WHITE FRANCIS ROGER</creatorcontrib><creatorcontrib>LAM CHUNG HON</creatorcontrib><creatorcontrib>LEE ERIC SEUNG</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>WHITE FRANCIS ROGER</au><au>LAM CHUNG HON</au><au>LEE ERIC SEUNG</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Dual layer etch stop barrier</title><date>2002-07-16</date><risdate>2002</risdate><abstract>A method for reactive ion etching of SiO2 and an etch stop barrier for use in such an etching is provided. A silicon nitride (SixNy) barrier having a Six to Ny ratio (x:y) of less than about 0.8 and preferably the stoichiometric amount of 0.75 provides excellent resilience to positive mobile ion contamination, but poor etch selectivity. However, a silicon nitride barrier having a ratio of Six to Nx (x:y) of 1.0 or greater has excellent etch selectivity with respect to SiO2 but a poor barrier to positive mobile ion contamination. A barrier of silicon nitride is formed on a doped silicon substrate which barrier has two sections. One section has a greater etch selectivity with respect to silicon dioxide than the second section and the second section has a greater resistance to transmission of positive mobile ions than the first section. One section adjacent the silicon substrate has a silicon to nitrogen ratio of less than about 0.8. The second section, formed on top of the first section is formed with the ratio of the silicon to nitrogen of greater than about 0.8. Preferably the two sections together are from about 50 to about 100 nanometers thick.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_US6420777B2 |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Dual layer etch stop barrier |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-15T19%3A24%3A47IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=WHITE%20FRANCIS%20ROGER&rft.date=2002-07-16&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS6420777B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |