Method for depositing copper onto a barrier layer
Copper is deposited onto a barrier layer such as tungsten from an electroless copper plating bath having a pH of at least 12.89 and a deposition rate of 50 nanometers/minute or less.
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| creator | MCFEELY FENTON READ PAUNOVIC MILAN ANDRICACOS PANAYOTIS BOETTCHER STEVEN H |
| description | Copper is deposited onto a barrier layer such as tungsten from an electroless copper plating bath having a pH of at least 12.89 and a deposition rate of 50 nanometers/minute or less. |
| format | Patent |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | Method for depositing copper onto a barrier layer |
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