Low k dielectric materials with inherent copper ion migration barrier

Low k dielectric materials with inherent copper ion migration barrier

An interlayer dielectric for preventing Cu ion migration in semiconductor structure containing a Cu region is provided. The interlayer dielectric of the present invention comprises a dielectric material that has a dielectric constant of 3.0 or less and an additive which is highly-capable of binding...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: HEDRICK JEFFREY CURTIS, SHAW JANE MARGARET, COHEN STEPHAN ALAN, FEGER CLAUDIUS
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator HEDRICK JEFFREY CURTIS
SHAW JANE MARGARET
COHEN STEPHAN ALAN
FEGER CLAUDIUS
description An interlayer dielectric for preventing Cu ion migration in semiconductor structure containing a Cu region is provided. The interlayer dielectric of the present invention comprises a dielectric material that has a dielectric constant of 3.0 or less and an additive which is highly-capable of binding Cu ions, yet is soluble in the dielectric material. The presence of the additive in the low k dielectric allows for the elimination of conventional inorganic barrier materials such as SiO2 or Si3N4.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US6414377B1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US6414377B1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US6414377B13</originalsourceid><addsrcrecordid>eNqNizEOgkAQRbexMOId5gIUBCK9BmJhp9ZkXL8yAXY3wyRcX008ANV7xXtb11ziQgM9BSO8qXia2KDC40yLWE8SeiiCkY8pQUlioEneyvazB6sKNHOb1_fA_s-do7a5nc45UuwwJ_YIsO5-PVRFVdb1sShXJB-f1TMs</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Low k dielectric materials with inherent copper ion migration barrier</title><source>esp@cenet</source><creator>HEDRICK JEFFREY CURTIS ; SHAW JANE MARGARET ; COHEN STEPHAN ALAN ; FEGER CLAUDIUS</creator><creatorcontrib>HEDRICK JEFFREY CURTIS ; SHAW JANE MARGARET ; COHEN STEPHAN ALAN ; FEGER CLAUDIUS</creatorcontrib><description>An interlayer dielectric for preventing Cu ion migration in semiconductor structure containing a Cu region is provided. The interlayer dielectric of the present invention comprises a dielectric material that has a dielectric constant of 3.0 or less and an additive which is highly-capable of binding Cu ions, yet is soluble in the dielectric material. The presence of the additive in the low k dielectric allows for the elimination of conventional inorganic barrier materials such as SiO2 or Si3N4.</description><edition>7</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2002</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20020702&amp;DB=EPODOC&amp;CC=US&amp;NR=6414377B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20020702&amp;DB=EPODOC&amp;CC=US&amp;NR=6414377B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HEDRICK JEFFREY CURTIS</creatorcontrib><creatorcontrib>SHAW JANE MARGARET</creatorcontrib><creatorcontrib>COHEN STEPHAN ALAN</creatorcontrib><creatorcontrib>FEGER CLAUDIUS</creatorcontrib><title>Low k dielectric materials with inherent copper ion migration barrier</title><description>An interlayer dielectric for preventing Cu ion migration in semiconductor structure containing a Cu region is provided. The interlayer dielectric of the present invention comprises a dielectric material that has a dielectric constant of 3.0 or less and an additive which is highly-capable of binding Cu ions, yet is soluble in the dielectric material. The presence of the additive in the low k dielectric allows for the elimination of conventional inorganic barrier materials such as SiO2 or Si3N4.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2002</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNizEOgkAQRbexMOId5gIUBCK9BmJhp9ZkXL8yAXY3wyRcX008ANV7xXtb11ziQgM9BSO8qXia2KDC40yLWE8SeiiCkY8pQUlioEneyvazB6sKNHOb1_fA_s-do7a5nc45UuwwJ_YIsO5-PVRFVdb1sShXJB-f1TMs</recordid><startdate>20020702</startdate><enddate>20020702</enddate><creator>HEDRICK JEFFREY CURTIS</creator><creator>SHAW JANE MARGARET</creator><creator>COHEN STEPHAN ALAN</creator><creator>FEGER CLAUDIUS</creator><scope>EVB</scope></search><sort><creationdate>20020702</creationdate><title>Low k dielectric materials with inherent copper ion migration barrier</title><author>HEDRICK JEFFREY CURTIS ; SHAW JANE MARGARET ; COHEN STEPHAN ALAN ; FEGER CLAUDIUS</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US6414377B13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2002</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>HEDRICK JEFFREY CURTIS</creatorcontrib><creatorcontrib>SHAW JANE MARGARET</creatorcontrib><creatorcontrib>COHEN STEPHAN ALAN</creatorcontrib><creatorcontrib>FEGER CLAUDIUS</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HEDRICK JEFFREY CURTIS</au><au>SHAW JANE MARGARET</au><au>COHEN STEPHAN ALAN</au><au>FEGER CLAUDIUS</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Low k dielectric materials with inherent copper ion migration barrier</title><date>2002-07-02</date><risdate>2002</risdate><abstract>An interlayer dielectric for preventing Cu ion migration in semiconductor structure containing a Cu region is provided. The interlayer dielectric of the present invention comprises a dielectric material that has a dielectric constant of 3.0 or less and an additive which is highly-capable of binding Cu ions, yet is soluble in the dielectric material. The presence of the additive in the low k dielectric allows for the elimination of conventional inorganic barrier materials such as SiO2 or Si3N4.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US6414377B1
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Low k dielectric materials with inherent copper ion migration barrier
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-03T03%3A31%3A54IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=HEDRICK%20JEFFREY%20CURTIS&rft.date=2002-07-02&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS6414377B1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true