Germanium silicon oxynitride high index films for planar waveguides

A composition represented by the formula Si1-xGexO2(1-y)N1.33y, wherein x is from about 0.05 to about 0.6 and y is from about 0.14 to about 0.74 exhibits properties highly suited for use in fabricating waveguides for liquid crystal based optical devices. In particular, the compositions have an index...

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Bibliographische Detailangaben
Hauptverfasser: SACHENIK PAUL ARTHUR, BELLMAN ROBERT ALAN, AKWANI IKERIONWU ASIEGBU, GRANDI THOMAS PAUL
Format: Patent
Sprache:eng
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