Method for fabricating an air gap metallization scheme that reduces inter-metal capacitance of interconnect structures

A method of manufacturing a metallization scheme with an air gap formed by vaporizing a filler polymer material. The filler material is covered by a critical permeable dielectric layer. The method begins by forming spaced conductive lines over a semiconductor structure. The spaced conductive lines h...

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Bibliographische Detailangaben

Hauptverfasser:	ANG TINGONG, SEE ALEX, TEH YOUNG-WAY, SIEW YONG KONG, LIM SENG KEONG VICTOR
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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