Advanced cobalt silicidation with in-situ hydrogen plasma clean

Various methods of fabricating a silicide structure are provided. In one aspect, a method of fabricating a circuit structure on a silicon surface is provided that includes exposing the silicon surface to a plasma ambient containing hydrogen and an inert gas, and depositing a metallic material capabl...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	FRENKEL AUSTIN, SULTAN AKIF, BESSER PAUL
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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