Method for making a metallic pattern by photolithography

A method for making a metallic pattern that includes redundant photolithography to significantly reduce the occurrence of defects in the metal layer that defines the desired metallic pattern. The presence of contaminants in the photoresist layer during exposure and developing away of portions of a p...

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Bibliographische Detailangaben
Hauptverfasser:	DESAI KAMALESH S, JEANNERET MATHIAS P, HUSSON BRIAN D, TIRCH, III STEPHEN J
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS PRINTED CIRCUITS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A method for making a metallic pattern that includes redundant photolithography to significantly reduce the occurrence of defects in the metal layer that defines the desired metallic pattern. The presence of contaminants in the photoresist layer during exposure and developing away of portions of a photoresist layer can cause defects in the metal layer that defines the desired metallic pattern. Contaminants in the photoresist layer prevent portions of the photoresist layer from being exposed and developed away, so that portions of the photoresist layer that should be developed away remain in place, thereby causing the development of defects in the metal layer that defines the desired metallic pattern. These contaminants move to different positions during the developing away of the photoresist. By exposing those portions of the photoresist layer that are no longer shielded from exposure by the contaminants because the contaminants have moved to different positions, those portions of the photoresist layer now can be developed away, so that they are no longer present and no longer cause defects in the metal layer that defines the desired metallic pattern.