Reinforced integrated circuits

Reinforced integrated circuits

A method of manufacturing integrated circuits wherein a conductive structure in a topmost semiconductive layer of an integrated circuit is provided having a thickness greater than or equal to 1.5 mum. The thickness of the conductive structure is sufficiently great as to effectively protect any layer...

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Hauptverfasser: HEIDENREICH, III JOHN E, VOLANT RICHARD P, SAMBUCETTI CARLOS J, RUBINO JUDITH M, PETRARCA KEVIN S, WALKER GEORGE F
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator HEIDENREICH, III JOHN E
VOLANT RICHARD P
SAMBUCETTI CARLOS J
RUBINO JUDITH M
PETRARCA KEVIN S
WALKER GEORGE F
description A method of manufacturing integrated circuits wherein a conductive structure in a topmost semiconductive layer of an integrated circuit is provided having a thickness greater than or equal to 1.5 mum. The thickness of the conductive structure is sufficiently great as to effectively protect any layers beneath the topmost semiconductive layer from damage from pressure, such as pressure applied by testing probes. In a preferred embodiment, traditional aluminum TD leveling is discarded in favor of gold deposited upon the thickened conductive layer.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Reinforced integrated circuits
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