Device for protection of sensitive gate dielectrics of advanced non-volatile memory devices from damage due to plasma charging

A protective circuit includes a pair of diodes to protect the gate dielectric of an insulated-gate semiconductor device from over-voltage conditions, such as can occur during plasma etch manufacturing processes. The diodes are either anode- or cathode-coupled, and are connected between the gate of t...

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Bibliographische Detailangaben

1. Verfasser:	FINZI DAVID G. A
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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