Method of manufacturing dummy pattern

A method of fabricating a dummy pattern is proposed. A semiconductor substrate is divided into a dense region and a sparse region. Conducting patterns are formed on the dense region. A dielectric layer is formed over the substrate and the conducting patterns. Photoresist patterns are formed on the d...

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Bibliographische Detailangaben
1. Verfasser:	CHEN WEI-SHIAU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS SEMICONDUCTOR DEVICES TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS
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Beschreibung
Zusammenfassung:	A method of fabricating a dummy pattern is proposed. A semiconductor substrate is divided into a dense region and a sparse region. Conducting patterns are formed on the dense region. A dielectric layer is formed over the substrate and the conducting patterns. Photoresist patterns are formed on the dielectric layer above the sparse region. The dielectric layer is etched back to form a plurality of spacers on the sidewall of the conducting patterns, and simultaneously, a plurality of dummy patterns are formed on the sparse region.