Method and apparatus for high-resolution in-situ plasma etching of inorganic and metal films

Method and apparatus for plasma etching both metal and inorganic dielectric layers in a single chamber during deep sub-micron semiconductor fabrication. Fluorine based chemistries, or a mixture of fluorine and chlorine based chemistries, are used to etch the inorganic dielectric layer. A switch is t...

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Bibliographische Detailangaben

Hauptverfasser:	BRONGO MAUREEN R, BERG MICHAEL J, HSIA SHAO-WEN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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