Method of making a memory cell having two layered tantalum oxide films

A semiconductor device includes a DRAM having a memory cell constructed by an information storage capacitor C which is comprised of a lower electrode 54 made of a ruthenium film and an upper electrode 62 made of a capacity insulating film 61 and a titanium nitride film and which is connected in seri...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	IIJIMA SHINPEI, KUNITOMO MASATO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!