Wafer having top and bottom emitting vertical-cavity lasers

A technique is described for determining the performance of substrate-side emitting VCSELs formed on a wafer. The technique involves forming top-emitting VCSELs on the same wafer as bottom-emitting VCSELs and then testing the top-emitting VCSELs and using the results to determine the performance of...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	GOOSSEN KEITH WAYNE, TSENG BETTY JYUE, HUI SANGHEE PARK, CHIROVSKY LEO MARIA, CUNNINGHAM JOHN EDWARD
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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