III-V semiconductor structure and its producing method

A III-V semiconductor structure and it producing method is provided. The method for forming a III-V semiconductor structure having a Schottky barrier layer includes the steps of (a) providing a III-V substrate, (b) treating the first barrier layer with a sulfuric acid solution, (c) forming a Schottk...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	HWU MING-JYH, WU YAO-HWA, WANG HUNG-TSUNG, CHANG LIANN-BE
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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