III-V semiconductor structure and its producing method
A III-V semiconductor structure and it producing method is provided. The method for forming a III-V semiconductor structure having a Schottky barrier layer includes the steps of (a) providing a III-V substrate, (b) treating the first barrier layer with a sulfuric acid solution, (c) forming a Schottk...
Gespeichert in:
| Hauptverfasser: | , , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | HWU MING-JYH WU YAO-HWA WANG HUNG-TSUNG CHANG LIANN-BE |
| description | A III-V semiconductor structure and it producing method is provided. The method for forming a III-V semiconductor structure having a Schottky barrier layer includes the steps of (a) providing a III-V substrate, (b) treating the first barrier layer with a sulfuric acid solution, (c) forming a Schottky barrier layer on the III-V substrate, and (d) forming a metal layer on the second barrier layer. The Ill-V semiconductor structure includes a III-V substrate, a Schottky barrier layer, and a metal layer. The Schottky barrier layer is made of Al2(SO4)3 and In2(SO4)3. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US6200885B1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US6200885B1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US6200885B13</originalsourceid><addsrcrecordid>eNrjZDDz9PTUDVMoTs3NTM7PSylNLskvUiguKQIySotSFRLzUhQyS4oVCorygXKZeekKuaklGfkpPAysaYk5xam8UJqbQcHNNcTZQze1ID8-tbggMTk1L7UkPjTYzMjAwMLC1MnQmAglADe4LUQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>III-V semiconductor structure and its producing method</title><source>esp@cenet</source><creator>HWU MING-JYH ; WU YAO-HWA ; WANG HUNG-TSUNG ; CHANG LIANN-BE</creator><creatorcontrib>HWU MING-JYH ; WU YAO-HWA ; WANG HUNG-TSUNG ; CHANG LIANN-BE</creatorcontrib><description>A III-V semiconductor structure and it producing method is provided. The method for forming a III-V semiconductor structure having a Schottky barrier layer includes the steps of (a) providing a III-V substrate, (b) treating the first barrier layer with a sulfuric acid solution, (c) forming a Schottky barrier layer on the III-V substrate, and (d) forming a metal layer on the second barrier layer. The Ill-V semiconductor structure includes a III-V substrate, a Schottky barrier layer, and a metal layer. The Schottky barrier layer is made of Al2(SO4)3 and In2(SO4)3.</description><edition>7</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2001</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20010313&DB=EPODOC&CC=US&NR=6200885B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,781,886,25569,76552</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20010313&DB=EPODOC&CC=US&NR=6200885B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HWU MING-JYH</creatorcontrib><creatorcontrib>WU YAO-HWA</creatorcontrib><creatorcontrib>WANG HUNG-TSUNG</creatorcontrib><creatorcontrib>CHANG LIANN-BE</creatorcontrib><title>III-V semiconductor structure and its producing method</title><description>A III-V semiconductor structure and it producing method is provided. The method for forming a III-V semiconductor structure having a Schottky barrier layer includes the steps of (a) providing a III-V substrate, (b) treating the first barrier layer with a sulfuric acid solution, (c) forming a Schottky barrier layer on the III-V substrate, and (d) forming a metal layer on the second barrier layer. The Ill-V semiconductor structure includes a III-V substrate, a Schottky barrier layer, and a metal layer. The Schottky barrier layer is made of Al2(SO4)3 and In2(SO4)3.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2001</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDDz9PTUDVMoTs3NTM7PSylNLskvUiguKQIySotSFRLzUhQyS4oVCorygXKZeekKuaklGfkpPAysaYk5xam8UJqbQcHNNcTZQze1ID8-tbggMTk1L7UkPjTYzMjAwMLC1MnQmAglADe4LUQ</recordid><startdate>20010313</startdate><enddate>20010313</enddate><creator>HWU MING-JYH</creator><creator>WU YAO-HWA</creator><creator>WANG HUNG-TSUNG</creator><creator>CHANG LIANN-BE</creator><scope>EVB</scope></search><sort><creationdate>20010313</creationdate><title>III-V semiconductor structure and its producing method</title><author>HWU MING-JYH ; WU YAO-HWA ; WANG HUNG-TSUNG ; CHANG LIANN-BE</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US6200885B13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2001</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>HWU MING-JYH</creatorcontrib><creatorcontrib>WU YAO-HWA</creatorcontrib><creatorcontrib>WANG HUNG-TSUNG</creatorcontrib><creatorcontrib>CHANG LIANN-BE</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HWU MING-JYH</au><au>WU YAO-HWA</au><au>WANG HUNG-TSUNG</au><au>CHANG LIANN-BE</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>III-V semiconductor structure and its producing method</title><date>2001-03-13</date><risdate>2001</risdate><abstract>A III-V semiconductor structure and it producing method is provided. The method for forming a III-V semiconductor structure having a Schottky barrier layer includes the steps of (a) providing a III-V substrate, (b) treating the first barrier layer with a sulfuric acid solution, (c) forming a Schottky barrier layer on the III-V substrate, and (d) forming a metal layer on the second barrier layer. The Ill-V semiconductor structure includes a III-V substrate, a Schottky barrier layer, and a metal layer. The Schottky barrier layer is made of Al2(SO4)3 and In2(SO4)3.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_US6200885B1 |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | III-V semiconductor structure and its producing method |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-14T17%3A19%3A49IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=HWU%20MING-JYH&rft.date=2001-03-13&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS6200885B1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |