Process and apparatus for preparation of silicon crystals with reduced metal content
A method and apparatus for producing silicon single crystals with reduced contamination is disclosed. In one embodiment the structural components constructed of graphite and located in the hot zone of the crystal pulling apparatus have two protective layers. The first protective layer is applied dir...
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| creator | HOLDER JOHN D JOSLIN STEVEN M KORB HAROLD W |
| description | A method and apparatus for producing silicon single crystals with reduced contamination is disclosed. In one embodiment the structural components constructed of graphite and located in the hot zone of the crystal pulling apparatus have two protective layers. The first protective layer is applied directly to the graphite component. The second protective layer is a silicon layer and is applied on top of the first protective layer and covers the first layer. In a second embodiment, the structural components constructed of graphite and located in the hot zone of the crystal pulling apparatus have a single protective layer. The single protective layer is applied directly to the graphite and consists of a mixture of silicon carbide and silicon. |
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In one embodiment the structural components constructed of graphite and located in the hot zone of the crystal pulling apparatus have two protective layers. The first protective layer is applied directly to the graphite component. The second protective layer is a silicon layer and is applied on top of the first protective layer and covers the first layer. In a second embodiment, the structural components constructed of graphite and located in the hot zone of the crystal pulling apparatus have a single protective layer. The single protective layer is applied directly to the graphite and consists of a mixture of silicon carbide and silicon.</description><edition>7</edition><language>eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; CHEMISTRY ; CRYSTAL GROWTH ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2001</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20010206&DB=EPODOC&CC=US&NR=6183553B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20010206&DB=EPODOC&CC=US&NR=6183553B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HOLDER JOHN D</creatorcontrib><creatorcontrib>JOSLIN STEVEN M</creatorcontrib><creatorcontrib>KORB HAROLD W</creatorcontrib><title>Process and apparatus for preparation of silicon crystals with reduced metal content</title><description>A method and apparatus for producing silicon single crystals with reduced contamination is disclosed. In one embodiment the structural components constructed of graphite and located in the hot zone of the crystal pulling apparatus have two protective layers. The first protective layer is applied directly to the graphite component. The second protective layer is a silicon layer and is applied on top of the first protective layer and covers the first layer. In a second embodiment, the structural components constructed of graphite and located in the hot zone of the crystal pulling apparatus have a single protective layer. 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In one embodiment the structural components constructed of graphite and located in the hot zone of the crystal pulling apparatus have two protective layers. The first protective layer is applied directly to the graphite component. The second protective layer is a silicon layer and is applied on top of the first protective layer and covers the first layer. In a second embodiment, the structural components constructed of graphite and located in the hot zone of the crystal pulling apparatus have a single protective layer. The single protective layer is applied directly to the graphite and consists of a mixture of silicon carbide and silicon.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | Process and apparatus for preparation of silicon crystals with reduced metal content |
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