Memory device using movement of protons

An enhancement of an electrically written memory element utilizing the motion of protons within a dielectric layer surrounded by layers on either side to confine the protons within the dielectric layer with electrode means attached to the surrounding layers to change the spatial position of the prot...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	FLEETWOOD, DANIEL M, ARCHER, LEO B, VANHEUSDEN, KAREL J. R, WALLACE, ROBERT M, BROWN, GEORGE A, DEVINE, RODERICK A. B, WARREN, WILLIAM L
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS SEMICONDUCTOR DEVICES STATIC STORES
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