Memory device using movement of protons

An enhancement of an electrically written memory element utilizing the motion of protons within a dielectric layer surrounded by layers on either side to confine the protons within the dielectric layer with electrode means attached to the surrounding layers to change the spatial position of the protons within the dielectric layer. The device is preferably constructed as a silicon-silicon dioxide-silicon layered structure with the protons being introduced to the structure during an anneal in an atmosphere containing hydrogen gas. Device operation is enhanced by concluding this anneal step with a sudden cooling. The device operates at low power, is preferably nonvolatile, is radiation tolerant, and is compatible with convention silicon MOS processing for integration with other microelectronics elements on the same silicon substrate.