Single crystal SIC and a method of producing the same
PCT No. PCT/JP98/02798 Sec. 371 Date Feb. 3, 1999 Sec. 102(e) Date Feb. 3, 1999 PCT Filed Jun. 23, 1998 PCT Pub. No. WO99/00538 PCT Pub. Date Jan. 7, 1999According to the present invention, a complex (M) which is formed by stacking a polycrystalline beta -SiC plate 2 on the surface of a single cryst...
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| creator | TANINO KICHIYA |
| description | PCT No. PCT/JP98/02798 Sec. 371 Date Feb. 3, 1999 Sec. 102(e) Date Feb. 3, 1999 PCT Filed Jun. 23, 1998 PCT Pub. No. WO99/00538 PCT Pub. Date Jan. 7, 1999According to the present invention, a complex (M) which is formed by stacking a polycrystalline beta -SiC plate 2 on the surface of a single crystal alpha -SiC base material 1 in a close contact state via a polished face or grown in a layer-like manner by the thermal CVD method is heat-treated in a temperature range of 1,850 to 2,400 DEG C., whereby polycrystals of the polycrystalline cubic beta -Sic plate are transformed into a single crystal, and the single crystal oriented in the same direction as the crystal axis of the single crystal alpha -SiC base material is grown. As a result, large single crystal SiC of high quality which is free from micropipe defects, lattice defects, generation of grain boundaries due to intrusion of impurities, and the like can be produced easily and efficiently. |
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Date Jan. 7, 1999According to the present invention, a complex (M) which is formed by stacking a polycrystalline beta -SiC plate 2 on the surface of a single crystal alpha -SiC base material 1 in a close contact state via a polished face or grown in a layer-like manner by the thermal CVD method is heat-treated in a temperature range of 1,850 to 2,400 DEG C., whereby polycrystals of the polycrystalline cubic beta -Sic plate are transformed into a single crystal, and the single crystal oriented in the same direction as the crystal axis of the single crystal alpha -SiC base material is grown. 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No. WO99/00538 PCT Pub. Date Jan. 7, 1999According to the present invention, a complex (M) which is formed by stacking a polycrystalline beta -SiC plate 2 on the surface of a single crystal alpha -SiC base material 1 in a close contact state via a polished face or grown in a layer-like manner by the thermal CVD method is heat-treated in a temperature range of 1,850 to 2,400 DEG C., whereby polycrystals of the polycrystalline cubic beta -Sic plate are transformed into a single crystal, and the single crystal oriented in the same direction as the crystal axis of the single crystal alpha -SiC base material is grown. As a result, large single crystal SiC of high quality which is free from micropipe defects, lattice defects, generation of grain boundaries due to intrusion of impurities, and the like can be produced easily and efficiently.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | Single crystal SIC and a method of producing the same |
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