Method for manufacturing a thin oxide for use in semiconductor integrated circuits

A method for forming a gate dielectric having different thickness begins by providing a substrate (12). A sacrificial oxide (14) is formed overlying the substrate (12). A first portion (11) of the sacrificial oxide (14) is exposed to a carbon-containing plasma environment (20). This carbon-containin...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	LII, YEONG-JYH TOM, CRABTREE, PHILLIP EARL, TSENG, HSING-HUANG, WU, WEI EDWIN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!