Method for manufacturing a thin oxide for use in semiconductor integrated circuits

Method for manufacturing a thin oxide for use in semiconductor integrated circuits

A method for forming a gate dielectric having different thickness begins by providing a substrate (12). A sacrificial oxide (14) is formed overlying the substrate (12). A first portion (11) of the sacrificial oxide (14) is exposed to a carbon-containing plasma environment (20). This carbon-containin...

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Hauptverfasser: LII, YEONG-JYH TOM, CRABTREE, PHILLIP EARL, TSENG, HSING-HUANG, WU, WEI EDWIN
Format: Patent
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator LII
YEONG-JYH TOM
CRABTREE
PHILLIP EARL
TSENG
HSING-HUANG
WU
WEI EDWIN
description A method for forming a gate dielectric having different thickness begins by providing a substrate (12). A sacrificial oxide (14) is formed overlying the substrate (12). A first portion (11) of the sacrificial oxide (14) is exposed to a carbon-containing plasma environment (20). This carbon-containing plasma environment (20) forms a carbon-containing layer (24) within the region (11). After forming this region (24), a wet etch chemistry (22) is used to remove remaining portions of the sacrificial oxide (14) without forming a layer (24) in the region (13). Furnace oxidation is then used to form regions (26a) and (26b) wherein the growth of region (26a) has been retarded by the presence of the region (24). Therefore, the regions (26a) and (26b) are differing in thickness and can be used to make different transistors having different current gains.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Method for manufacturing a thin oxide for use in semiconductor integrated circuits
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