Zincate catalysis electroless metal deposition for via metal interconnection
A method of forming an interconnect or metal line in a semiconductor device using an zinc activated metal surface and electroless deposition. The invention forms an active metal layer (e.g., Al) layer on an insulating layer in a via hole, activates the active metal layer to form a Zn layer, and elec...
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creator | KE CHIH-MING SHEN YUN-HUNG CHANG JIEH-TING |
description | A method of forming an interconnect or metal line in a semiconductor device using an zinc activated metal surface and electroless deposition. The invention forms an active metal layer (e.g., Al) layer on an insulating layer in a via hole, activates the active metal layer to form a Zn layer, and electrolessly deposits a metal (e.g., Cu, Ni, Au, or Ag) by reacting with the Zn layer. The metal layer is electroless deposited over the insulating layer. The metal layer fills the via hole to form a metal interconnect or line. Key features of the invention are the active metal layer and the zincate process (not a zinc particle process). |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US6083834A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US6083834A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US6083834A3</originalsourceid><addsrcrecordid>eNrjZPCJysxLTixJVQASiTmVxZnFCqk5qcklRfk5qcXFCrmpQFGFlNSC_OLMksz8PIW0_CKFssxEqERmXklqUXJ-Xh5QB1CWh4E1LTGnOJUXSnMzyLu5hjh76AL1x6cWFyQmp-allsSHBpsZWBhbGJs4GhNWAQA6FjYa</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Zincate catalysis electroless metal deposition for via metal interconnection</title><source>esp@cenet</source><creator>KE; CHIH-MING ; SHEN; YUN-HUNG ; CHANG; JIEH-TING</creator><creatorcontrib>KE; CHIH-MING ; SHEN; YUN-HUNG ; CHANG; JIEH-TING</creatorcontrib><description>A method of forming an interconnect or metal line in a semiconductor device using an zinc activated metal surface and electroless deposition. The invention forms an active metal layer (e.g., Al) layer on an insulating layer in a via hole, activates the active metal layer to form a Zn layer, and electrolessly deposits a metal (e.g., Cu, Ni, Au, or Ag) by reacting with the Zn layer. The metal layer is electroless deposited over the insulating layer. The metal layer fills the via hole to form a metal interconnect or line. Key features of the invention are the active metal layer and the zincate process (not a zinc particle process).</description><edition>7</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2000</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20000704&DB=EPODOC&CC=US&NR=6083834A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,778,883,25551,76302</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20000704&DB=EPODOC&CC=US&NR=6083834A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KE; CHIH-MING</creatorcontrib><creatorcontrib>SHEN; YUN-HUNG</creatorcontrib><creatorcontrib>CHANG; JIEH-TING</creatorcontrib><title>Zincate catalysis electroless metal deposition for via metal interconnection</title><description>A method of forming an interconnect or metal line in a semiconductor device using an zinc activated metal surface and electroless deposition. The invention forms an active metal layer (e.g., Al) layer on an insulating layer in a via hole, activates the active metal layer to form a Zn layer, and electrolessly deposits a metal (e.g., Cu, Ni, Au, or Ag) by reacting with the Zn layer. The metal layer is electroless deposited over the insulating layer. The metal layer fills the via hole to form a metal interconnect or line. Key features of the invention are the active metal layer and the zincate process (not a zinc particle process).</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2000</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZPCJysxLTixJVQASiTmVxZnFCqk5qcklRfk5qcXFCrmpQFGFlNSC_OLMksz8PIW0_CKFssxEqERmXklqUXJ-Xh5QB1CWh4E1LTGnOJUXSnMzyLu5hjh76AL1x6cWFyQmp-allsSHBpsZWBhbGJs4GhNWAQA6FjYa</recordid><startdate>20000704</startdate><enddate>20000704</enddate><creator>KE; CHIH-MING</creator><creator>SHEN; YUN-HUNG</creator><creator>CHANG; JIEH-TING</creator><scope>EVB</scope></search><sort><creationdate>20000704</creationdate><title>Zincate catalysis electroless metal deposition for via metal interconnection</title><author>KE; CHIH-MING ; SHEN; YUN-HUNG ; CHANG; JIEH-TING</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US6083834A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2000</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>KE; CHIH-MING</creatorcontrib><creatorcontrib>SHEN; YUN-HUNG</creatorcontrib><creatorcontrib>CHANG; JIEH-TING</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KE; CHIH-MING</au><au>SHEN; YUN-HUNG</au><au>CHANG; JIEH-TING</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Zincate catalysis electroless metal deposition for via metal interconnection</title><date>2000-07-04</date><risdate>2000</risdate><abstract>A method of forming an interconnect or metal line in a semiconductor device using an zinc activated metal surface and electroless deposition. The invention forms an active metal layer (e.g., Al) layer on an insulating layer in a via hole, activates the active metal layer to form a Zn layer, and electrolessly deposits a metal (e.g., Cu, Ni, Au, or Ag) by reacting with the Zn layer. The metal layer is electroless deposited over the insulating layer. The metal layer fills the via hole to form a metal interconnect or line. Key features of the invention are the active metal layer and the zincate process (not a zinc particle process).</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | Zincate catalysis electroless metal deposition for via metal interconnection |
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