Device including a thermally protected switching transistor

A device (1) for supplying electric power to a load (4) connected to the device (1) in a power-on mode comprises a driver stage (7), a control unit (9), adapted to supply turn-on pulses to the driver stage (7), and an output stage (12) with a switching transistor (1) which can be driven into its con...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: HASLER, RUDOLF
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator HASLER
RUDOLF
description A device (1) for supplying electric power to a load (4) connected to the device (1) in a power-on mode comprises a driver stage (7), a control unit (9), adapted to supply turn-on pulses to the driver stage (7), and an output stage (12) with a switching transistor (1) which can be driven into its conductive state for a time interval (TEIN) by the driver stage (7) in the power-on mode when turn-on pulses occur, and which can be driven into its non-conductive state after expiry of the time interval (TEIN), the driver stage (7) being also adapted to monitor the operating temperature (TS) of the switching transistor (11) and to activate a power-off mode when the operating temperature (TS) of the switching transistor (11) exceeds a first limit temperature (TG1), in which power-off mode the switching transistor (11) is permanently driven into its non-conductive state by the driver stage (7) in spite of the occurrence of turn-on pulses (IS), the driver state (7) further comprising a sensing transistor (21), a sensing resistor (22), a turn-on transistor (23), a turn-on resistor (24) for monitoring the operating temperature (TS) of the switching transistor (11), as well as a zener diode (29) and a turn-off stage (32) for obtaining a short switching time of the switching transistor (11), the sensing transistor (21) being arranged so as a to be substantially uninfluenced by the operating temperature (TS) of the switching transistor (11).
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US6021037A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US6021037A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US6021037A3</originalsourceid><addsrcrecordid>eNrjZLB2SS3LTE5VyMxLzilNycxLV0hUKMlILcpNzMmpVCgoyi9JTS5JTVEoLs8sSc4AyZcUJeYVZxaX5BfxMLCmJeYUp_JCaW4GeTfXEGcP3dSC_PjU4oLE5NS81JL40GAzAyNDA2NzR2PCKgA5yi9l</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Device including a thermally protected switching transistor</title><source>esp@cenet</source><creator>HASLER; RUDOLF</creator><creatorcontrib>HASLER; RUDOLF</creatorcontrib><description>A device (1) for supplying electric power to a load (4) connected to the device (1) in a power-on mode comprises a driver stage (7), a control unit (9), adapted to supply turn-on pulses to the driver stage (7), and an output stage (12) with a switching transistor (1) which can be driven into its conductive state for a time interval (TEIN) by the driver stage (7) in the power-on mode when turn-on pulses occur, and which can be driven into its non-conductive state after expiry of the time interval (TEIN), the driver stage (7) being also adapted to monitor the operating temperature (TS) of the switching transistor (11) and to activate a power-off mode when the operating temperature (TS) of the switching transistor (11) exceeds a first limit temperature (TG1), in which power-off mode the switching transistor (11) is permanently driven into its non-conductive state by the driver stage (7) in spite of the occurrence of turn-on pulses (IS), the driver state (7) further comprising a sensing transistor (21), a sensing resistor (22), a turn-on transistor (23), a turn-on resistor (24) for monitoring the operating temperature (TS) of the switching transistor (11), as well as a zener diode (29) and a turn-off stage (32) for obtaining a short switching time of the switching transistor (11), the sensing transistor (21) being arranged so as a to be substantially uninfluenced by the operating temperature (TS) of the switching transistor (11).</description><edition>7</edition><language>eng</language><subject>BASIC ELECTRONIC CIRCUITRY ; CONTROLLING ; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER ; ELECTRICITY ; EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS ; GENERATION ; PHYSICS ; PULSE TECHNIQUE ; REGULATING ; SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES</subject><creationdate>2000</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20000201&amp;DB=EPODOC&amp;CC=US&amp;NR=6021037A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76294</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20000201&amp;DB=EPODOC&amp;CC=US&amp;NR=6021037A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HASLER; RUDOLF</creatorcontrib><title>Device including a thermally protected switching transistor</title><description>A device (1) for supplying electric power to a load (4) connected to the device (1) in a power-on mode comprises a driver stage (7), a control unit (9), adapted to supply turn-on pulses to the driver stage (7), and an output stage (12) with a switching transistor (1) which can be driven into its conductive state for a time interval (TEIN) by the driver stage (7) in the power-on mode when turn-on pulses occur, and which can be driven into its non-conductive state after expiry of the time interval (TEIN), the driver stage (7) being also adapted to monitor the operating temperature (TS) of the switching transistor (11) and to activate a power-off mode when the operating temperature (TS) of the switching transistor (11) exceeds a first limit temperature (TG1), in which power-off mode the switching transistor (11) is permanently driven into its non-conductive state by the driver stage (7) in spite of the occurrence of turn-on pulses (IS), the driver state (7) further comprising a sensing transistor (21), a sensing resistor (22), a turn-on transistor (23), a turn-on resistor (24) for monitoring the operating temperature (TS) of the switching transistor (11), as well as a zener diode (29) and a turn-off stage (32) for obtaining a short switching time of the switching transistor (11), the sensing transistor (21) being arranged so as a to be substantially uninfluenced by the operating temperature (TS) of the switching transistor (11).</description><subject>BASIC ELECTRONIC CIRCUITRY</subject><subject>CONTROLLING</subject><subject>CONVERSION OR DISTRIBUTION OF ELECTRIC POWER</subject><subject>ELECTRICITY</subject><subject>EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS</subject><subject>GENERATION</subject><subject>PHYSICS</subject><subject>PULSE TECHNIQUE</subject><subject>REGULATING</subject><subject>SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2000</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLB2SS3LTE5VyMxLzilNycxLV0hUKMlILcpNzMmpVCgoyi9JTS5JTVEoLs8sSc4AyZcUJeYVZxaX5BfxMLCmJeYUp_JCaW4GeTfXEGcP3dSC_PjU4oLE5NS81JL40GAzAyNDA2NzR2PCKgA5yi9l</recordid><startdate>20000201</startdate><enddate>20000201</enddate><creator>HASLER; RUDOLF</creator><scope>EVB</scope></search><sort><creationdate>20000201</creationdate><title>Device including a thermally protected switching transistor</title><author>HASLER; RUDOLF</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US6021037A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2000</creationdate><topic>BASIC ELECTRONIC CIRCUITRY</topic><topic>CONTROLLING</topic><topic>CONVERSION OR DISTRIBUTION OF ELECTRIC POWER</topic><topic>ELECTRICITY</topic><topic>EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS</topic><topic>GENERATION</topic><topic>PHYSICS</topic><topic>PULSE TECHNIQUE</topic><topic>REGULATING</topic><topic>SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES</topic><toplevel>online_resources</toplevel><creatorcontrib>HASLER; RUDOLF</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HASLER; RUDOLF</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Device including a thermally protected switching transistor</title><date>2000-02-01</date><risdate>2000</risdate><abstract>A device (1) for supplying electric power to a load (4) connected to the device (1) in a power-on mode comprises a driver stage (7), a control unit (9), adapted to supply turn-on pulses to the driver stage (7), and an output stage (12) with a switching transistor (1) which can be driven into its conductive state for a time interval (TEIN) by the driver stage (7) in the power-on mode when turn-on pulses occur, and which can be driven into its non-conductive state after expiry of the time interval (TEIN), the driver stage (7) being also adapted to monitor the operating temperature (TS) of the switching transistor (11) and to activate a power-off mode when the operating temperature (TS) of the switching transistor (11) exceeds a first limit temperature (TG1), in which power-off mode the switching transistor (11) is permanently driven into its non-conductive state by the driver stage (7) in spite of the occurrence of turn-on pulses (IS), the driver state (7) further comprising a sensing transistor (21), a sensing resistor (22), a turn-on transistor (23), a turn-on resistor (24) for monitoring the operating temperature (TS) of the switching transistor (11), as well as a zener diode (29) and a turn-off stage (32) for obtaining a short switching time of the switching transistor (11), the sensing transistor (21) being arranged so as a to be substantially uninfluenced by the operating temperature (TS) of the switching transistor (11).</abstract><edition>7</edition><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US6021037A
source esp@cenet
subjects BASIC ELECTRONIC CIRCUITRY
CONTROLLING
CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
ELECTRICITY
EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
GENERATION
PHYSICS
PULSE TECHNIQUE
REGULATING
SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
title Device including a thermally protected switching transistor
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-23T02%3A29%3A48IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=HASLER;%20RUDOLF&rft.date=2000-02-01&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS6021037A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true