Compound electrode stack capacitor

This invention is directed to a semiconductor memory device including a storage element comprising a ferroelectric material or a capacitor dielectric material between a top (plate) electrode and a bottom (stack) electrode. In particular, the invention pertains to the design and fabrication of the st...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	ANDRICACOS, PANAYOTIS CONSTANTINOU, KOTECKI, DAVID EDWARD, SAENGER, KATHERINE LYNN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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