Method for forming a semiconductor device having a capacitor structure

A method of forming a stacked capacitor structure in a semiconductor device, having metal electrode plates. After depositing the bottom electrode layer (26) and the dielectric layer (28) of the capacitor, a rough patterning step is carried out to roughly pattern or shape the bottom electrode layer a...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	WENG, KENNETH CHIA-KUN, LIN, DER-GAO, WU, KEVIN YUN-KANG, GANGER, JEFFREY D, LOHN, CHRISTOPHER STERLING
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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