Etching method for silicon substrates and semiconductor sensor

An etching method for a silicon substrate, which can easily smooth the etching surface of the (110)-oriented silicon, is disclosed. A container is filled with KOH solution. In the KOH solution is immersed a (110)-oriented silicon wafer having a PN junction and is also disposed a platinum electrode p...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	TANAKA, HIROSHI, OKADA, FUKADA, TSUYOSHI, ITO, MOTOKI, SUZUKI, YASUTOSHI, MIZUNO, KOKI, IKEDA, KAZUHISA, ABE, YOSHITSUGU, SAKAI, MINEKAZU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MEASURING MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE PHYSICS SEMICONDUCTOR DEVICES TESTING
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