T-gate MESFET process using dielectric film lift-off technique
An improved method for forming a T-gate structure in a MESFET includes dielectric lift-off steps.
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| creator | NGUYEN XUAN YOO HYUNG MO |
| description | An improved method for forming a T-gate structure in a MESFET includes dielectric lift-off steps. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US5940697A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US5940697A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US5940697A3</originalsourceid><addsrcrecordid>eNrjZLAL0U1PLElV8HUNdnMNUSgoyk9OLS5WKC3OzEtXSMlMzUlNLinKTFZIy8zJVcjJTCvRzU9LUyhJTc7IyywsTeVhYE1LzClO5YXS3AzyQGOcPXRTC_LjU4sLEpNT81JL4kODTS1NDMwszR2NCasAACmbLyc</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>T-gate MESFET process using dielectric film lift-off technique</title><source>esp@cenet</source><creator>NGUYEN; XUAN ; YOO; HYUNG MO</creator><creatorcontrib>NGUYEN; XUAN ; YOO; HYUNG MO</creatorcontrib><description>An improved method for forming a T-gate structure in a MESFET includes dielectric lift-off steps.</description><edition>6</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>1999</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19990817&DB=EPODOC&CC=US&NR=5940697A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25562,76317</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19990817&DB=EPODOC&CC=US&NR=5940697A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>NGUYEN; XUAN</creatorcontrib><creatorcontrib>YOO; HYUNG MO</creatorcontrib><title>T-gate MESFET process using dielectric film lift-off technique</title><description>An improved method for forming a T-gate structure in a MESFET includes dielectric lift-off steps.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1999</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLAL0U1PLElV8HUNdnMNUSgoyk9OLS5WKC3OzEtXSMlMzUlNLinKTFZIy8zJVcjJTCvRzU9LUyhJTc7IyywsTeVhYE1LzClO5YXS3AzyQGOcPXRTC_LjU4sLEpNT81JL4kODTS1NDMwszR2NCasAACmbLyc</recordid><startdate>19990817</startdate><enddate>19990817</enddate><creator>NGUYEN; XUAN</creator><creator>YOO; HYUNG MO</creator><scope>EVB</scope></search><sort><creationdate>19990817</creationdate><title>T-gate MESFET process using dielectric film lift-off technique</title><author>NGUYEN; XUAN ; YOO; HYUNG MO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US5940697A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1999</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>NGUYEN; XUAN</creatorcontrib><creatorcontrib>YOO; HYUNG MO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>NGUYEN; XUAN</au><au>YOO; HYUNG MO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>T-gate MESFET process using dielectric film lift-off technique</title><date>1999-08-17</date><risdate>1999</risdate><abstract>An improved method for forming a T-gate structure in a MESFET includes dielectric lift-off steps.</abstract><edition>6</edition><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | T-gate MESFET process using dielectric film lift-off technique |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-09T20%3A52%3A14IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=NGUYEN;%20XUAN&rft.date=1999-08-17&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS5940697A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |