Method of fabricating silicon-on-insulator substrate

A method of fabricating a SOI substrate is disclosed, which includes the steps of: forming trenches in the Si substrate; forming an oxidation preventing film over the Si substrate and at the side-walls of the trenches; forming grooves at the bottoms of trenches by etching the Si substrate using the...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	YOON, HAN-SUB, KIM, JIN-HYOUNG, KYOON-HYOUNG
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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