Method and apparatus for preparing and metallizing high aspect ratio silicon semiconductor device contacts to reduce the resistivity thereof

A CVD apparatus is equipped with a cleaning gas source, selectively connectable to a gas inlet of the chamber of the apparatus, structure, to supply a gas mixture of hydrogen and argon in which the hydrogen content is between 20 percent and 80 percent by volume. A selectively operable 450 MHz MF ene...

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Bibliographische Detailangaben
Hauptverfasser: HILLMAN, JOSEPH T, AMEEN, MICHAEL S
Format: Patent
Sprache:eng
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