Semi-insulating wafer

A bonded wafer 10 has a silicon device layer 20 bonded to a layer of semi-insulating material 14, preferably a mobility degraded silicon such as polycrystaline silicon. Layer 14 is thick enough and substrate 16 is conductive enough to reduce resistive losses when devices in layer 20 are operated at...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	RIVOLI, ANTHONY, BEGLEY, PATRICK A, LOWTHER, REX E, BAJOR, GYORGY
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

container_end_page
container_issue
container_start_page
container_title
container_volume
creator	RIVOLI ANTHONY BEGLEY PATRICK A LOWTHER REX E BAJOR GYORGY
description	A bonded wafer 10 has a silicon device layer 20 bonded to a layer of semi-insulating material 14, preferably a mobility degraded silicon such as polycrystaline silicon. Layer 14 is thick enough and substrate 16 is conductive enough to reduce resistive losses when devices in layer 20 are operated at frequencies above 0.1 Ghz. Substrate 16 is conductive enough and semi-insulating material 14 is resistive enough to prevent cross-talk among devices in layer 20.
format	Patent
fullrecord	<record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US5773151A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US5773151A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US5773151A3</originalsourceid><addsrcrecordid>eNrjZBANTs3N1M3MKy7NSSzJzEtXKE9MSy3iYWBNS8wpTuWF0twM8m6uIc4euqkF-fGpxQWJyal5qSXxocGm5ubGhqaGjsaEVQAAAb0gjg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Semi-insulating wafer</title><source>esp@cenet</source><creator>RIVOLI; ANTHONY ; BEGLEY; PATRICK A ; LOWTHER; REX E ; BAJOR; GYORGY</creator><creatorcontrib>RIVOLI; ANTHONY ; BEGLEY; PATRICK A ; LOWTHER; REX E ; BAJOR; GYORGY</creatorcontrib><description>A bonded wafer 10 has a silicon device layer 20 bonded to a layer of semi-insulating material 14, preferably a mobility degraded silicon such as polycrystaline silicon. Layer 14 is thick enough and substrate 16 is conductive enough to reduce resistive losses when devices in layer 20 are operated at frequencies above 0.1 Ghz. Substrate 16 is conductive enough and semi-insulating material 14 is resistive enough to prevent cross-talk among devices in layer 20.</description><edition>6</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>1998</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19980630&DB=EPODOC&CC=US&NR=5773151A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19980630&DB=EPODOC&CC=US&NR=5773151A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>RIVOLI; ANTHONY</creatorcontrib><creatorcontrib>BEGLEY; PATRICK A</creatorcontrib><creatorcontrib>LOWTHER; REX E</creatorcontrib><creatorcontrib>BAJOR; GYORGY</creatorcontrib><title>Semi-insulating wafer</title><description>A bonded wafer 10 has a silicon device layer 20 bonded to a layer of semi-insulating material 14, preferably a mobility degraded silicon such as polycrystaline silicon. Layer 14 is thick enough and substrate 16 is conductive enough to reduce resistive losses when devices in layer 20 are operated at frequencies above 0.1 Ghz. Substrate 16 is conductive enough and semi-insulating material 14 is resistive enough to prevent cross-talk among devices in layer 20.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1998</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBANTs3N1M3MKy7NSSzJzEtXKE9MSy3iYWBNS8wpTuWF0twM8m6uIc4euqkF-fGpxQWJyal5qSXxocGm5ubGhqaGjsaEVQAAAb0gjg</recordid><startdate>19980630</startdate><enddate>19980630</enddate><creator>RIVOLI; ANTHONY</creator><creator>BEGLEY; PATRICK A</creator><creator>LOWTHER; REX E</creator><creator>BAJOR; GYORGY</creator><scope>EVB</scope></search><sort><creationdate>19980630</creationdate><title>Semi-insulating wafer</title><author>RIVOLI; ANTHONY ; BEGLEY; PATRICK A ; LOWTHER; REX E ; BAJOR; GYORGY</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US5773151A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1998</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>RIVOLI; ANTHONY</creatorcontrib><creatorcontrib>BEGLEY; PATRICK A</creatorcontrib><creatorcontrib>LOWTHER; REX E</creatorcontrib><creatorcontrib>BAJOR; GYORGY</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>RIVOLI; ANTHONY</au><au>BEGLEY; PATRICK A</au><au>LOWTHER; REX E</au><au>BAJOR; GYORGY</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semi-insulating wafer</title><date>1998-06-30</date><risdate>1998</risdate><abstract>A bonded wafer 10 has a silicon device layer 20 bonded to a layer of semi-insulating material 14, preferably a mobility degraded silicon such as polycrystaline silicon. Layer 14 is thick enough and substrate 16 is conductive enough to reduce resistive losses when devices in layer 20 are operated at frequencies above 0.1 Ghz. Substrate 16 is conductive enough and semi-insulating material 14 is resistive enough to prevent cross-talk among devices in layer 20.</abstract><edition>6</edition><oa>free_for_read</oa></addata></record>
fulltext	fulltext_linktorsrc
identifier
ispartof
issn
language	eng
recordid	cdi_epo_espacenet_US5773151A
source	esp@cenet
subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
title	Semi-insulating wafer
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-24T21%3A56%3A26IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=RIVOLI;%20ANTHONY&rft.date=1998-06-30&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS5773151A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true