Semiconductor device
Main electrodes (M10, M20, M30) are almost aligned along the length of a resin case (1). The main electrodes (M10, M20, M30) each have one main surface (inside main surface) facing the inside of the case body (101), where the insulating substrates (3A, 3B) are provided, and the other main surface (o...
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creator | IWASA TATUYA ARAI KIYOSHI |
description | Main electrodes (M10, M20, M30) are almost aligned along the length of a resin case (1). The main electrodes (M10, M20, M30) each have one main surface (inside main surface) facing the inside of the case body (101), where the insulating substrates (3A, 3B) are provided, and the other main surface (outside main surface) facing the outside of the case body (101), opposite to the side where the insulating substrates (3A, 3B) are provided. A conductor (4) is so disposed as to be opposed to the outside main surfaces of the main electrodes (M10, M20, M30). Having this configuration, a semiconductor device is provided, which enables reduction of the self-inductance without parallel arrangement of the main electrodes, achieves a high switching characteristic and ensures a stable operation and high reliability. |
format | Patent |
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The main electrodes (M10, M20, M30) each have one main surface (inside main surface) facing the inside of the case body (101), where the insulating substrates (3A, 3B) are provided, and the other main surface (outside main surface) facing the outside of the case body (101), opposite to the side where the insulating substrates (3A, 3B) are provided. A conductor (4) is so disposed as to be opposed to the outside main surfaces of the main electrodes (M10, M20, M30). Having this configuration, a semiconductor device is provided, which enables reduction of the self-inductance without parallel arrangement of the main electrodes, achieves a high switching characteristic and ensures a stable operation and high reliability.</description><edition>6</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>1998</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19980602&DB=EPODOC&CC=US&NR=5761040A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19980602&DB=EPODOC&CC=US&NR=5761040A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>IWASA; TATUYA</creatorcontrib><creatorcontrib>ARAI; KIYOSHI</creatorcontrib><title>Semiconductor device</title><description>Main electrodes (M10, M20, M30) are almost aligned along the length of a resin case (1). 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Having this configuration, a semiconductor device is provided, which enables reduction of the self-inductance without parallel arrangement of the main electrodes, achieves a high switching characteristic and ensures a stable operation and high reliability.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1998</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBAJTs3NTM7PSylNLskvUkhJLctMTuVhYE1LzClO5YXS3Azybq4hzh66qQX58anFBYnJqXmpJfGhwabmZoYGJgaOxoRVAADl4iBC</recordid><startdate>19980602</startdate><enddate>19980602</enddate><creator>IWASA; TATUYA</creator><creator>ARAI; KIYOSHI</creator><scope>EVB</scope></search><sort><creationdate>19980602</creationdate><title>Semiconductor device</title><author>IWASA; TATUYA ; ARAI; KIYOSHI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US5761040A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1998</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>IWASA; TATUYA</creatorcontrib><creatorcontrib>ARAI; KIYOSHI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>IWASA; TATUYA</au><au>ARAI; KIYOSHI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor device</title><date>1998-06-02</date><risdate>1998</risdate><abstract>Main electrodes (M10, M20, M30) are almost aligned along the length of a resin case (1). The main electrodes (M10, M20, M30) each have one main surface (inside main surface) facing the inside of the case body (101), where the insulating substrates (3A, 3B) are provided, and the other main surface (outside main surface) facing the outside of the case body (101), opposite to the side where the insulating substrates (3A, 3B) are provided. A conductor (4) is so disposed as to be opposed to the outside main surfaces of the main electrodes (M10, M20, M30). Having this configuration, a semiconductor device is provided, which enables reduction of the self-inductance without parallel arrangement of the main electrodes, achieves a high switching characteristic and ensures a stable operation and high reliability.</abstract><edition>6</edition><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | Semiconductor device |
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