Method and apparatus for self-timed precharge of bit lines in a memory
A method and apparatus are disclosed for self-timing the precharge of bit lines (22) in a memory array. A reference column bit line (26) is charged to create a reference column voltage. The bit lines (22) in the memory array (12) are precharged until the reference voltage exceeds a first threshold.
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| Format: | Patent |
| Sprache: | eng |
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