Refractory gate heterostructure field effect transistor

A heterostructure field effect transistor and method including at least one passivation layer (20) and at least one etch stop layer (22). Enhancement, depletion and combined devices with both enhancement mode and depletion mode devices are possible with minor process variations. Refractory gate (40)...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	HUANG, JENN-HWA, TEHRANI, SAIED NIKOO, NAIR, VIJAY K, HASHEMI, MAJID M, ABROKWAH, JONATHAN K, NIKPOURIAN, FARIDEH, O'NEIL, II, VERNON PATRICK
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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