Circuitry for controlling a threshold voltage in a flash memory cell

The circuit for controlling the threshold voltage in the flash memory cell according to the present invention comprises a circuit for generating a first voltage depending on the amount of a drain current in the memory cell; a first element for comparing the first voltage with a reference voltage and...

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Bibliographische Detailangaben

Hauptverfasser:	SONE, JAE HYUN, HONG, SOON WON
Format:	Patent
Sprache:	eng
Schlagworte:	INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
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