Method of forming high performance bipolar devices with improved wiring options

High-performance bipolar transistors with improved wiring options and fabrication methods therefore are set forth. The bipolar transistor includes a base contact structure that has multiple contact pads which permit multiple device layouts when wiring to the transistor. For example, a first device l...

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Bibliographische Detailangaben

Hauptverfasser:	SCHMIDT, NICHOLAS THEODORE, DUNN, JAMES STUART, KIEFT, III, KENNETH KNETCH, LANPHER, ALBERT EDSON, JOHNSON, ERIC DAVID, KERTIS, ROBERT ANDREW, HULVEY, MICHAEL DEAN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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