MESFET having a termination layer in the channel layer

A lateral MESFET (10,20) utilizes a drain (17) and a source (18) damage termination layer to improve the breakdown voltage of the MESFET (10,20). The source (18) and drain (17) damage termination layers are very shallow to prevent interfering with lateral current flow in the channel layer (12). The...

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Bibliographische Detailangaben

Hauptverfasser:	THERO, CHRISTINE, MOORE, KAREN E, WEITZEL, CHARLES E
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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