Process of making semiconductor device using focused ion beam for resistless in situ etching, deposition, and nucleation

Process of making semiconductor device using focused ion beam for resistless in situ etching, deposition, and nucleation

Disclosed is a method for producing ultra dense and ultra fast integrated circuits utilizing an advanced ion beam processing system. An exposure chamber which supports a focused ion beam column and an ancillary chamber, both of which are maintained under ultra high vacuum are utilized to perform res...

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Hauptverfasser: BERENZ, JOHN J
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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JOHN J
description Disclosed is a method for producing ultra dense and ultra fast integrated circuits utilizing an advanced ion beam processing system. An exposure chamber which supports a focused ion beam column and an ancillary chamber, both of which are maintained under ultra high vacuum are utilized to perform resistless in-situ etching, deposition, implantation and oxidation processes. By performing these processes within the exposure chamber and the ancillary chamber which contains various connecting chambers, ultra dense and ultra fast integrated circuits can be produced with reduced manufacturing steps thereby increasing production yield and throughput.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Process of making semiconductor device using focused ion beam for resistless in situ etching, deposition, and nucleation
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